کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845041 | 1645433 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge collection properties of X-ray irradiated monolithic active pixel sensors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CMOS monolithic active pixel sensors (MAPS) constitute a novel technique for position sensitive charged particle detectors. Their development is driven by the requirements of vertex detectors for future high-energy and nuclear physics experiments as well as by those of biomedical applications, namely highly granular dosimetry. The radiation hardness of MAPS-detectors is subject to intensive studies. Their resistance against up to â¼1012Â neq/cm2 was demonstrated [M. Deveaux, G. Claus, G. Deptuch,W. Dulinski, Y. Gornushkin, M. Winter, Nucl. Instr. and Meth. A 512 (2003) 71-76]. On the other hand, only poor data are available so far about their resistance against ionising doses. This paper summarises the results of radiation hardness studies on two different MAPS-detectors up to a dose of 1Â MRad.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 118-123
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 118-123
نویسندگان
M. Deveaux, J.D. Berst, W. de Boer, M. Caccia, G. Claus, G. Deptuch, W. Dulinski, G. Gaycken, D. Grandjean, L. Jungermann, J.L. Riester, M. Winter,