کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845047 | 1645433 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of standard and oxygenated float zone Si diodes under radiotherapy beams
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dosimetric response of silicon diodes made from high resistivity float zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon has been studied with a 60Co clinical radiotherapy gamma source. To investigate the changes in sensitivity with the accumulated dose, the diodes have been exposed to doses of 137Cs gamma-rays up to 6Â kGy. As expected, Si diodes showed a degradation in the signal response with the accumulated dose due to the formation of radiation-induced defects acting as lifetime killers. Nonetheless, the DOFZ Si diode appeared to be moderately radiation harder than the standard FZ sample, with a decay of sensitivity less pronounced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 158-162
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 158-162
نویسندگان
M. Casati, M. Bruzzi, M. Bucciolini, D. Menichelli, M. Scaringella, C. Piemonte, E. Fretwurst,