کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845191 | 1526509 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DEPFET development at the MPI semiconductor laboratory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The DEPFET device concept offers unique properties that make it useful for applications in X-ray astronomy and particle physics as well as in other fields. They form the basis for two major projects of the MPI Semiconductor Laboratory. This survey reviews device concepts, potential, technology and properties of devices produced at the laboratory. A self-aligning double poly double metal technology has been developed and already the first prototype production run has delivered devices with excellent properties (for example, a noise of ENC=2.2 electrons at room temperature). Another new technology allows the production of very thin (50 μm) detectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 549, Issues 1â3, 1 September 2005, Pages 103-111
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 549, Issues 1â3, 1 September 2005, Pages 103-111
نویسندگان
Gerhard Lutz,