کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845354 | 1526512 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resolution degradation of semiconductor detectors due to carrier trapping
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Resolution degradation of semiconductor detectors due to carrier trapping Resolution degradation of semiconductor detectors due to carrier trapping](/preview/png/9845354.png)
چکیده انگلیسی
Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6-660Â keV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 546, Issues 1â2, 1 July 2005, Pages 209-212
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 546, Issues 1â2, 1 July 2005, Pages 209-212
نویسندگان
A.G. Kozorezov, J.K. Wigmore, A. Owens, R. den Hartog, A. Peacock, Hala A Al-Jawhari,