کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9845371 1526512 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Studies of bulk damage induced in different silicon materials by 900 Mev electron irradiation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Studies of bulk damage induced in different silicon materials by 900 Mev electron irradiation
چکیده انگلیسی
Silicon test structures manufactured on different substrate materials (standard and oxygenated float-zone, magnetic and non-magnetic Czochralski, epitaxial silicon) have been irradiated with 900 MeV electrons up to a fluence of 6.1×1015e/cm2. Results are reported on the variation of the effective dopant concentration and of the leakage current density as a function of the electron fluence. The time evolution of the effective dopant concentration is also reported after thermal annealing cycles at 80∘C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 546, Issues 1–2, 1 July 2005, Pages 300-305
نویسندگان
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