Novel p-stop structure in n-side of silicon microstrip detector

In order to suppress the high electric field at the edge of the p-stop structure, a novel p-stop structure with DC field-plate was proposed. An n-in-n detector with the novel p-stop structure showed no onset of microdischarge, before and after proton irradiation of fluences of 3×1013 and 3×1014 p/cm2.