Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current

Using the single ion hit Transient Ion Beam Induced Current (TIBIC), the transient current generated in n+p 6H-SiC diodes by 15 MeV-oxygen (O4+) microbeams was measured. The signal peak of the transient current increases, and the fall-time, which is defined as the decay time from 90% to 10% of the transient current, decreases with increasing applied reverse bias. The charge generated in n+p 6H-SiC diodes was estimated from the integration of the TIBIC signal. As the result, the value of collected charge increases with increasing applied reverse bias up to 90 V, and the saturation of the collected charge was observed at reverse biases above 100 V. At reverse biases below 110 V, the charge generated in the deeper region as compared to the depletion layer length is collected due to the funneling effect. Almost all charge generated in n+p SiC diodes by 15 MeV-O4+ irradiation can be collected when the length of depletion layer becomes longer than the projection range of 15 MeV-O4+ ions. No significant difference in transient behavior and charge collection is observed between gamma-ray (0.26 MGy) irradiated and non-irradiated samples.