کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845816 | 1526521 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Gamma-ray irradiation effects on high-power diodes and bipolar transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Gamma-ray irradiation effects on high-power diodes and bipolar transistors Gamma-ray irradiation effects on high-power diodes and bipolar transistors](/preview/png/9845816.png)
چکیده انگلیسی
The degradation of the current gain was measured as a function of the total dose. It drastically decreased with irradiation. However, the leakage current of irradiated diodes decreased slightly with irradiation. The annealing of the irradiated devices, at room temperature, was also tested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 538, Issues 1â3, 11 February 2005, Pages 703-707
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 538, Issues 1â3, 11 February 2005, Pages 703-707
نویسندگان
A. Al-Mohamad, M. Chahoud,