کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9845816 1526521 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gamma-ray irradiation effects on high-power diodes and bipolar transistors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Gamma-ray irradiation effects on high-power diodes and bipolar transistors
چکیده انگلیسی
The degradation of the current gain was measured as a function of the total dose. It drastically decreased with irradiation. However, the leakage current of irradiated diodes decreased slightly with irradiation. The annealing of the irradiated devices, at room temperature, was also tested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 538, Issues 1–3, 11 February 2005, Pages 703-707
نویسندگان
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