کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845897 | 1526522 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Scintillation studies of CdS(In): effects of various semiconductor doping strategies
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We present room-temperature photoluminescence and pulsed X-ray measurements of powder samples of CdS(In) codoped with three hole traps (Te, Ag, and Na). Te is an isoelectronic hole trap and Ag and Na are acceptor hole traps. The emission of CdS(In) excited at 430Â nm is centered at â520Â nm (near the band edge) with â20Â nm FWHM. The emissions from CdS(Te) and the three codoped samples are shifted to longer wavelengths and are characterized by broad emission bands peaking near 630Â nm.Whereas the decay of the CdS(Te) emission is nonexponential with times >10Â ns, the decay of CdS(In,Te) is 3.3Â ns and exponential over three decades. The decay of the acceptor-doped samples CdS(In,Ag) and CdS(In,Na) are also fast, 2.5 and 2.8Â ns, respectively. These results show the potential for developing fast inorganic scintillators based on direct-gap semiconductors that can be codoped to provide fast radiative recombination. Additional work is needed to increase the luminosity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 537, Issues 1â2, 21 January 2005, Pages 261-265
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 537, Issues 1â2, 21 January 2005, Pages 261-265
نویسندگان
S.E. Derenzo, E. Bourret-Courchesne, M.J. Weber, M.K. Klintenberg,