کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9951520 | 1666336 | 2019 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure](/preview/png/9951520.png)
چکیده انگلیسی
We report our first-principles calculations that clarify the electronic states of oxygen-related defects in the 4H-SiC bulk and on the 4H-SiC surface and how they are affected by the surface amorphous structure due to oxidation. It is experimentally reported that thermally oxidized 4H-SiC contains an abundant amount of single-photon sources on its surface (surface SPSs) and that their emitting wavelengths have variance. However, the microscopic mechanism is not clarified yet. In our work, we demonstrate that the energy levels of the oxygen-related defects on the surface are altered sensitively by the local atomic structure of the amorphous surface leading to variations in the wavelengths.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 464, 15 January 2019, Pages 451-454
Journal: Applied Surface Science - Volume 464, 15 January 2019, Pages 451-454
نویسندگان
Yu-ichiro Matsushita, Yoritaka Furukawa, Yasuto Hijikata, Takeshi Ohshima,