کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9951526 | 1666336 | 2019 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We studied the infrared absorption of a top sulfur hyperdoping layer covering an fs-laser irradiated microstructured Si substrate. To clarify the hyperdoping concentration distributions, and to find out how the top hyperdoping layer affects infrared absorption from 1200 to 2000â¯nm, a continuous etching treatment was utilized. Then we interpreted the thermal stabilization of both infrared absorption and sulfur hyperdoping concentration. The fundamental cause for infrared-absorption degradation under thermal annealing was explained. Furthermore, we discussed in detail how the interaction between the top hyperdoping layer and surface microstructure contributed to the high infrared absorption by a series of theoretical simulations using a finite-difference time-domain method. A strong localization of an incident electromagnetic wave was observed around the top sulfur hyperdoping layer covering microstructured Si, which played a critical role in improving infrared absorption. The results in this paper are especially beneficial to the subsequent fabrication of photoelectric devices and infrared response improvement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 464, 15 January 2019, Pages 502-508
Journal: Applied Surface Science - Volume 464, 15 January 2019, Pages 502-508
نویسندگان
Ke Wang, Jinsong Gao, Haigui Yang, Xiaoyi Wang, Yanchao Wang, Zhuo Zhang,