
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
Keywords: 68.55.Aâ; 68.55.âa; 68.55.Jâ; 61.05.cp; 81.15.Gh; 81.05.Ea; Nucleation; X-ray diffraction; High temperature hydride vapor phase epitaxy; HT-HVPE; Nitrides; AlN; Semiconducting aluminum compounds;