InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
Keywords: 81.15.Hi; 61.10. Nz; 78.55. Cr; 73.50.Ey; A. InGaP/GaAs; B. Molecular beam epitaxy; D. Heterojunction bipolar transistor;