کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653378 | 1002871 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650 °C. When the InAs/GaAs QDs were annealed at 700 °C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800 °C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 133, Issue 1, January 2005, Pages 65-70
Journal: Solid State Communications - Volume 133, Issue 1, January 2005, Pages 65-70
نویسندگان
K.H. Lee, J.Y. Lee, D.U. Lee, T.W. Kim, H.S. Lee, M.D. Kim,