Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition
Keywords: A1 ساختار کریستالی; 61.16.Bg; 61.82.Fk; 68.55.âJK; 68.55.Ln; 81.05.Cy; 81.10.Bk; 81.15.Hi; 81.15.Jj; 85.30.Kk; 84.60.Jt; A1. Crystal structure; A1. Impurities; A3. Molecular beam epitaxy; A3. Physical vapour deposition processes; B2. Semiconducting silicon; B3. Solar cells