کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829616 | 1524495 | 2005 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition
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کلمات کلیدی
81.15.Hi81.10.Bk81.05.Cy68.55.Ln84.60.Jt61.82.Fk85.30.KkA3. Physical vapour deposition processes61.16.Bg - 61.16 ب.گ.81.15.Jj - 81.15.JJA1. Crystal structure - A1 ساختار کریستالیA1. Impurities - A1 ناخالصی هاA3. Molecular Beam Epitaxy - A3 اپیتاکسی پرتوهای مولکولیB2. Semiconducting silicon - B2 سیلیکون نیمه رساناB3. Solar cells - B3 سلول های خورشیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition](/preview/png/9829616.png)
چکیده انگلیسی
Using single crystalline Si wafer substrates, ion-assisted deposition (IAD) has recently been shown [J. Crystal Growth 268 (2004) 41] to be capable of high-quality high-rate epitaxial Si growth in a non-ultra-high vacuum (non-UHV) environment at low temperatures of about 600 °C. In the present work the non-UHV IAD method is applied to planar borosilicate glass substrates featuring a polycrystalline silicon seed layer and carefully optimised. Using thin-film solar cells as test vehicle, the best trade-off between various contamination-related processes (seed layer surface as well as bulk contamination) is determined. In the optimised IAD process, the temperature of the glass substrate remains below 600 °C. The as-grown Si material is found to respond well to post-growth treatments (rapid thermal annealing, hydrogenation), enabling respectable open-circuit voltages of up to 420 mV under 1-Sun illumination. This proves that the non-UHV IAD method is capable of achieving device-grade polycrystalline silicon material on seeded borosilicate glass substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 385-400
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 385-400
نویسندگان
Axel Straub, Daniel Inns, Mason L. Terry, Yidan Huang, Per I. Widenborg, Armin G. Aberle,