
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps
Keywords: A1 هسته; 61.72.Ff; 61.72.Lk; 68.37.Lp; 68.35.Gy; 61.72.BbA1. Interfaces; A1. Line defects; A1. Nucleation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds