
Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
Keywords: 81.05.Ea; 81.15.Hi; 81.07.St; A1. Multiwafer growth; A3. Gas source molecular beam epitaxy; B2. Semiconducting III-V materials; B3. InGaAsP/InP lasers;