کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829545 | 1524494 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures](/preview/png/9829545.png)
چکیده انگلیسی
We have grown long-period AlInP/InGaAsP strain-compensated multiple-layer heterostructures (SCMLHs) and SCMLHs combined with InAsP/InGaAsP strain-compensated multiple quantum wells (SC-MQWs) by gas source molecular beam epitaxy. Etch pit density (EPD) for both structures are in magnitude of â¼105Â cmâ2. The increment of EPD with increase of period number is small, indicating low sensitivity of the dislocation density to the increase of period number of SCMLHs. High resolution X-ray diffraction and photoluminescence (PL) characterizations of the two structures demonstrate that crystal quality remains high due to strain compensation. Diffusion and segregation of indium were clearly observed in both InGaAsP and AlInP layers by secondary ion mass spectroscopy. As the thickness of epilayers increases In content increases, while Al decreases. PL for the structure of 20-pair AlInP/InGaAsP SCMLHs+InAsP/InGaAsP SC-MQWs shows strong luminescence and narrow line width. The strain-compensated technique can effectively suppress the formation of misfit dislocations in AlInP/InGaAsP SCMLHs although the thicknesses of epilayers are above the critical thickness of consisting materials, which may render its potential application in optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 255-262
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 255-262
نویسندگان
Z.C. Huang, H.Z. Wu, Y.F. Lao, M. Cao, C. Liu,