Effective surface passivation of In0.53Ga0.47As(0Â 0Â 1) using molecular beam epitaxy and atomic layer deposited HfO2 - A comparative study
Keywords: A3. Molecular-beam-epitaxy (MBE); Atomic-layer-deposition (ALD); B1. High-κ; HfO2; B2. InGaAs; B3. Metal oxide semiconductor capacitors (MOSCAPs); Interfacial trap density (Dit);