کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795320 | 1524483 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The growth and characteristics of ultrahigh carbon-doped p-type InGaAs lattice matched to InP by gas source molecular beam epitaxy (GSMBE) using carbon tetrabromide (CBr4) as a doping source was investigated. The effects of growth temperature, group V supply pressure and CBr4 supply pressure on the composition, hole mobility and concentration of carbon-doped InGaAs were studied. The dependence of hydrogen passivation effect on different AsH3 supply pressure and different growth temperature were researched. Ultrahigh net hole concentration and room-temperature mobility of 1Ã1020Â cmâ3 and 45Â cm2/VÂ s, respectively, were achieved without any postgrowth annealing. Mobility of the ultrahigh carbon-doped InGaAs using CBr4 compared favorably to those of CBE grown carbon-doped InGaAs using CBr4 and molecular beam epitaxy grown beryllium (Be)-doped InGaAs grown at low temperature. The highly carbon-doped InGaAs layers grown by GSMBE using CBr4 as a doping source were used for the growth of high performance, highly carbon-doped base InP/InGaAs heterojunction bipolar transistor epitaxial layer structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 212-216
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 212-216
نویسندگان
Anhuai Xu, Ming Qi, Fuying Zhu, Hao Sun, Likun Ai,