Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10â9Â A and a high rectification ratio above 105
Keywords: pâZn-GaN films; RF sputtering; Hetero junction diode; I-V measurement; Cheungs' method; TE mode;