Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105

Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 222, August 2017, Pages 18-25

Thi Tran Anh Tuan, Dong-Hau Kuo, Albert Daniel Saragih, Guan-Zhang Li,