Rearrangement of up-and-down terrace in Si(1Â 1Â 0) “16Â ÃÂ 2” induced by Sn adsorption
Keywords: پراش الکترونی انرژی پایین; Scanning tunneling microscopy; Growth; Surface structure, morphology, roughness, and topography; Adsorption kinetics; Low energy electron diffraction;