کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9595136 | 1507983 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rearrangement of up-and-down terrace in Si(1Â 1Â 0) “16Â ÃÂ 2” induced by Sn adsorption
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have studied Sn/Si(1Â 1Â 0) surface structures with scanning tunneling microscopy (STM). The unique dense-step structure in a clean Si(1Â 1Â 0) “16Â ÃÂ 2” phase is successfully modified as a function of Sn coverage up to 0.4 monolayer (ML). The width of about 2.5Â nm of the up-and-down terrace (“16Â ÃÂ 2”) is broadened stepwise by Sn adsorption passing through the “28Â ÃÂ 2” phase (0.2Â ML), the mixture of “14Â ÃÂ 2” and “7Â ÃÂ 2” (0.3Â ML) and the “7Â ÃÂ 2” (0.4Â ML) phases. In particular, the “28Â ÃÂ 2” phase is formed by the ordered up-and-down terrace structures of about 4Â nm width. High-resolution STM images clearly reveal that in the series of structural changes, the Si pentagons, which are the elemental structures of the “16Â ÃÂ 2” phase [T. An, M. Yoshimura, I. Ono, K. Ueda, Phys. Rev. B 61 (2000) 3006], rearrange in accordance with Sn trimers. The relaxation process of the surface stress plays a key role in determining the surface morphology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 576, Issues 1â3, 10 February 2005, Pages 165-174
Journal: Surface Science - Volume 576, Issues 1â3, 10 February 2005, Pages 165-174
نویسندگان
Toshu An, Masamichi Yoshimura, Kazuyuki Ueda,