Promoting strain relaxation of Si0.72Ge0.28 film on Si (1Â 0Â 0) substrate by inserting a low-temperature Ge islands layer in UHVCVD
Keywords: 68.55. âa; 78.30. âj; 81.65. Mq; 81.70.Jb; Relaxed buffer; SiGe film; LT-Ge layer; Strain relaxation; UHVCVD;