کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369327 | 1388428 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Promoting strain relaxation of Si0.72Ge0.28 film on Si (1Â 0Â 0) substrate by inserting a low-temperature Ge islands layer in UHVCVD
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 Ã 104 cmâ2 for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 5, Part 2, 30 December 2008, Pages 2660-2664
Journal: Applied Surface Science - Volume 255, Issue 5, Part 2, 30 December 2008, Pages 2660-2664
نویسندگان
Zhiwen Zhou, Zhimeng Cai, Cheng Li, Hongkai Lai, Songyan Chen, Jinzhong Yu,