Keywords: آرامش استرس; Nanocrystalline platinum films; Strain relaxation; Thickness fringes;
مقالات ISI آرامش استرس (ترجمه نشده)
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Keywords: آرامش استرس; Capacitance; Carbon nanotubes forests; Electrostatic force; Resonance; Strain relaxation;
Keywords: آرامش استرس; Hexagonal patterns; Strain relaxation; Sol gel; Composite thin films; Modeling
Keywords: آرامش استرس; Silicon; Germanium; Silicon-germanium alloy; Surfactant-mediated epitaxy; Strain relaxation; Surface roughness;
Keywords: آرامش استرس; Nano-crystalline platinum; Thin films; Strain relaxation; Vacancy creation
Keywords: آرامش استرس; Strain relaxation; Dislocation; Epitaxy; Implantation;
Keywords: آرامش استرس; Nickel oxide; Epitaxial growth; Sol–gel process; X-ray diffraction; Transmission electron microscopy; Strain relaxation; Poisson's ratio
Pyro-paraelectricity
Keywords: آرامش استرس; Pyroelectricity; Paraelectricity; Flexoelectricity; Thermal-electric conversion; Strain relaxation; Barium strontium titanate
Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge(1â¯1â¯1) substrate
Keywords: آرامش استرس; Dual-nanowire heterostructure; GeSn alloy; Raman scattering; Strain relaxation;
Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars
Keywords: آرامش استرس; Localisation effect; Nanopillars LED; Phase-separation; Strain relaxation;
Strain relaxation comparison of GaInP and AlInAs metamorphic buffers grown on GaAs substrates
Keywords: آرامش استرس; AlInAs metamorphic buffer; GaInP metamorphic buffer; Strain relaxation; Threading dislocation; Tilt;
The role of delayed elasticity and stress relaxation in Sn-Bi-Cu lead-free solders solidified under permanent magnet stirring
Keywords: آرامش استرس; Sn-Bi-Cu alloys; Permanent magnet stirring; Microstructure; Strain relaxation; Stress relaxation;
Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
Keywords: آرامش استرس; GaN/AlN superlattice; XRD; Microstructure; Strain relaxation; Dislocations; Cracks;
Effects of Si-doping on characteristics of semi-polar (112Ì
2) plane Al0.45Ga0.55N epi-layers
Keywords: آرامش استرس; Semi-polar (112¯2) plane AlGaN; Si-doping; Strain relaxation; Dislocation movement;
Evolution of irradiation-induced strain in an equiatomic NiFe alloy
Keywords: آرامش استرس; Molecular dynamics; X-ray diffraction (XRD); Nickel alloys; Point defects; Strain relaxation;
Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures
Keywords: آرامش استرس; Ge MBE on Si(100); High-temperature growth; Self-organization; Strain relaxation; Dynamic equilibrium;
Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
Keywords: آرامش استرس; Nanowires; Si/GaAs; Strain relaxation; TEM;
Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs
Keywords: آرامش استرس; Nanopillar LED; Phase-separation; Dual-wavelength; Strain relaxation; Photoluminescence;
Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation
Keywords: آرامش استرس; Ge condensation; Strain relaxation; Plastic deformation of BOX; Gliding dislocations; Over-oxidation;
Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells
Keywords: آرامش استرس; Implantation; He+; Nano-bubbles; Ge(Si); LPCVD; Strain relaxation;
Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers
Keywords: آرامش استرس; Si-doped AlGaN; Polar; Non-polar; Strain relaxation; Structural anisotropy;
Structural and optical studies of strain relaxation in Ge1 − xSnx layers grown on Ge/Si(001) by molecular beam epitaxy
Keywords: آرامش استرس; Germanium-tin; Molecular beam epitaxy; High-resolution X-ray diffraction; Raman scattering; Strain relaxation
Stress and strain relaxation in magnesium AZ31 rolled plate: In-situ neutron measurement and elastic viscoplastic polycrystal modeling
Keywords: آرامش استرس; Strain relaxation; A. Stress relaxation; Magnesium alloy; Neutron diffraction; Stress distribution;
Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy
Keywords: آرامش استرس; Nanoporous GaN; Porosity; Raman spectroscopy; Strain relaxation
Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
Keywords: آرامش استرس; Metamorphic GaInP buffers; Threading dislocations; X-ray diffraction; Strain relaxation; Dislocation annihilation
Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Keywords: آرامش استرس; Germanosilicide; SiGe; Strain; Strain relaxation
Polarization characteristics of 480-680 nm (1 1 2¯ 2) InGaN/GaN quantum well structures with strain relaxation effects
Keywords: آرامش استرس; Optical polarization; GaN; InGaN; Strain relaxation; Quantum well; Light-emitting diode;
Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs
Keywords: آرامش استرس; Nanopillar LED; Strain relaxation; Phase-separation; Photoluminescence;
Role of thermal annealing on SiGe thin films fabricated by PECVD
Keywords: آرامش استرس; SiGe thin film; PECVD; Thermal annealing; grain size; Hardness; Strain relaxation;
Influence of Ge substrate orientation on crystalline structures of Ge1 â xSnx epitaxial layers
Keywords: آرامش استرس; Germanium; Tin; Epitaxial growth; Strain relaxation; Ge(111); Ge(110);
Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates
Keywords: آرامش استرس; Metamorphic buffer; Strain relaxation; Si doping; Dislocation multiplication; Phase separation;
Lattice distortion and strain relaxation in epitaxial thin films of multiferroic TbMnO3 probed by X-ray diffractometry and micro-Raman spectroscopy
Keywords: آرامش استرس; Multiferroic; Thin film growth; Lattice distortion; Strain relaxation;
Strain behavior of epitaxial Si1 â xCx films on silicon substrates during dry oxidation
Keywords: آرامش استرس; Si1 â xCx; Oxidation; Strain relaxation; Strain engineering; Nanobeam diffraction;
Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing
Keywords: آرامش استرس; Epitaxy; Chemical vapor deposition; Strain relaxation; Transmission electron microscopy; Thermal stability
Relaxation of a strained 3C-SiC(1Â 1Â 1) thin film on silicon by He+ and O+ ion beam defect engineering
Keywords: آرامش استرس; Silicon; Silicon carbide; Ion beam defect engineering; Strain relaxation; Transmission electron microscopy;
Effect of sintering in ball-milled K2Bi8Se13 thermoelectric nano-composites
Keywords: آرامش استرس; Nanostructured; Heat treatment; Strain relaxation; Grain growth;
Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness
Keywords: آرامش استرس; ZnO; Metal organic vapor phase epitaxy; Strain relaxation; Photoluminescence; AlN buffer
Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density
Keywords: آرامش استرس; SiGe layer; LT Ge; Strain relaxation; 81.15Â Gh; 68.55Â ag; 78.66Â Db;
Structural characterization of La0.9Ba0.1MnO3/Y-ZrO2 film by X-ray diffraction
Keywords: آرامش استرس; La0.9Ba0.1MnO3 film; Grazing incidence X-ray diffraction; Strain relaxation; Structural characterization;
Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method
Keywords: آرامش استرس; Free-standing Si membranes; Finite element method; Convergent beam electron diffraction; Strain relaxation
Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator
Keywords: آرامش استرس; 68.55.Ag; 81.15.âz; 68.37.Lp; Strained silicon; SiGe; Strain relaxation; Raman spectroscopy;
Formation of uniaxially strained SiGe by selective ion implantation technique
Keywords: آرامش استرس; SiGe; Uniaxial strain; Ion implantation; Strain relaxation
Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature
Keywords: آرامش استرس; 68.55.âa; 78.30.âj; 68.37. Ps; 62.40. +i; Thermal stability; SiGe; LT-Ge; Strain relaxation;
The influence of dislocation distribution density on curvature and interface stress in epitaxial thin films on a flexible substrate
Keywords: آرامش استرس; 74A60; 74K35; 74Q0568.35.Gy; 68.60.Bs; 81.40.JjMisfit dislocations; Strain relaxation; Continuous distribution of dislocations; Bimorph interface stress
Measurement of (post-)curing strain development with fibre Bragg gratings
Keywords: آرامش استرس; Liquid composite moulding; Cure shrinkage; Fibre Bragg gratings; Strain relaxation; Thermosetting polyurethane;
Effects of group-V impurities on the elastic properties of silicon
Keywords: آرامش استرس; Silicon; Strain; Strain relaxation; Impurities; Perturbed angular correlation;
Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1−xGex structures on Si(0 0 1) substrates
Keywords: آرامش استرس; Germanium; Silicon; Tensile strain; Strain relaxation; Dislocation; X-ray diffraction
Strain relaxation in SiGe layer during wet oxidation process
Keywords: آرامش استرس; 81.65.Mq; 68.55.âa; 83.85.St; Silicon germanium; Oxidation; Strain relaxation;
A simple route to interpenetrating network hydrogel with high mechanical strength
Keywords: آرامش استرس; Hydrogel; Interpenetrating network; Two-step method; Mechanical strength; Strain relaxation
Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer
Keywords: آرامش استرس; 68.55. -a; 78.30. -j; 81.65. Mq; 81.70.Jb; SiGe; Thermal annealing; Si-Ge intermixing; Strain relaxation;