Effects of group-V impurities on the elastic properties of silicon

For nitrogen-implanted silicon the response of the crystal lattice to mechanical stress shows no difference to undoped samples, which means that nitrogen has no influence on strain fields in silicon. However, after implantation of the donors P, As and Sb a significant strain relaxation is observed which is probably due to dislocations. We show that this relaxation caused by n-doping also extends to undoped areas which are adjacent to the implanted region.