کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5351869 | 1503676 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigate the effects of Si doping on the strain relaxation of the compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition on (0 0 1) GaAs substrates with different miscuts toward (1 1 1)A. It is found that in the 2° samples, high Si doping can reduce both the α and β dislocation densities by delaying and suppressing the formation of phase separation in the buffer. In contrast, in the 7° samples, Si dopants deteriorate the buffer quality through increasing the dislocation density accompanying with the tilt reduction along the [1 1 0] direction, and a striking feature, bunches of β dislocations away from the interfaces, is observed in the [1 1 0] cross-sectional transmission electron microscopy images. A cross-slip mechanism closely associated with the pinning effect of Si on α dislocation motion is proposed to explain the multiplication of β dislocations. These results indicate that selecting a moderate Si doping density and substrate miscut are critical for the design and fabrication of metamorphic optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 288, 1 January 2014, Pages 482-487
Journal: Applied Surface Science - Volume 288, 1 January 2014, Pages 482-487
نویسندگان
K.L. Li, J.R. Dong, Y.R. Sun, X.L. Zeng, Y.M. Zhao, S.Z. Yu, C.Y. Zhao, H. Yang,