Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs

In this paper, strong phase-separated blue/green dual-wavelength InGaN/GaN nanopillar (NP) light emitting diodes (LEDs) with the same NP density and various NP diameters were fabricated using focused ion beam etching. Micro-Raman spectroscopy was used to show the effect of NP diameter on the strain relaxation in the multi-quantum-wells (MQWs). The effect of NP diameter on optical behaviors of the strong phase-separated dual-wavelength InGaN/GaN NP LEDs was investigated for the first time by using micro-photoluminescence (PL) spectroscopy. The blue shifts of PL peak energies of the NP LEDs showed that the NP LED with a smaller diameter exhibited a larger strain relaxation in the MQWs, as confirmed by micro-Raman results. And the blue shift of green emission was smaller than that of blue emission. The total integrated PL intensities from the NP arrays were enhanced compared to the as-grown sample due to the increased recombination rate and light extraction efficiency. The enhancement factor decreased with decreasing the NP diameter in our experiments, which indicated that the loss of active volume was gradually dominant for the luminous efficiency of NP LEDs compared to the increased recombination rate and light extraction efficiency.