کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1680962 1518745 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He+ and O+ ion beam defect engineering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He+ and O+ ion beam defect engineering
چکیده انگلیسی
In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam synthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting of nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing yields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 272, 1 February 2012, Pages 322-325
نویسندگان
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