کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006252 | 1461389 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Si-doping on characteristics of semi-polar (112Ì
2) plane Al0.45Ga0.55N epi-layers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of Si-doping on characteristics of semi-polar (112Ì
2) plane Al0.45Ga0.55N epi-layers Effects of Si-doping on characteristics of semi-polar (112Ì
2) plane Al0.45Ga0.55N epi-layers](/preview/png/5006252.png)
چکیده انگلیسی
The semi-polar (112Ì
2) plane Al0.45Ga0.55N epi-layers with various Si-doping levels were successfully deposited on (10-10) m-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). And the effects of Si-doping on the characteristics of the epi-layer samples were studied extensively by high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), Raman spectroscopy, and Hall effect measurements. The characterization results showed that the compressive strain in the as-deposited Al0.45Ga0.55N films could be completely relaxed by Si-doping with appropriate silane (SiH4) mole flow rate owing to the enhanced dislocation movements induced by Si dopants. This fact implies that Si-doping to the semi-polar (112Ì
2) plane Al0.45Ga0.55N epi-layer is especially beneficial to the interaction and annihilation of the dislocations, resulting in a significant improvement in crystal quality. Moreover, the minimum root mean square (RMS) detected by AFM was as small as 1.47Â nm, and the electron concentration and mobility was determined by the Hall effect measurement to be 1.8Ã1019Â cmâ3 and 36.65Â cm2Â Vâ1Â sâ1 for the same sample, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 58, February 2017, Pages 30-33
Journal: Materials Science in Semiconductor Processing - Volume 58, February 2017, Pages 30-33
نویسندگان
Qian Dai, Xiong Zhang, Jianguo Zhao, Huakai Luan, Zongwen Liang, Yiping Cui,