Precursors as enablers of ALD technology: Contributions from University of Helsinki
Keywords: acac; acetylacetonate; ALD; atomic layer deposition; CET; capacitance equivalent thickness; CHT; cycloheptatrienyl; CHD; cyclohexadiene; CMOS; complementary metal oxide semiconductor; CN; coordination number; Cp; cyclopentadienide; COD; cyclooctadiene; CV