
Electrical characterization studies of p-type Ge, Ge1−ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Keywords: تخلیه بخار بخار خلاء فوق العاده بالا; Hall-effect measurement; Degenerate conducting layer; Conductivity type conversion; Ultra-high vacuum chemical vapor deposition; Germanium–tin alloys