کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10135804 | 1645672 | 2019 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
All-optical photonic crystal memory cells based on cavities with a dual-argument hysteresis feature
ترجمه فارسی عنوان
سلول های حافظه کریستال فوتونی کامل بر اساس حفره ها با قابلیت هیسترزیدگی دوگانه است
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
In this paper, the idea of an all-optical photonic crystal memory cell based on a cavity with a hysteresis feature as a function of two independent variables is introduced. A two-dimensional square lattice of Si rods in a SiO2 background is used for this purpose. Plane wave expansion and finite difference time domain methods are used to simulate the structures. A novel cavity topology with Kerr-type nonlinearity is used for designing the memory cells. The cavity which supports two degenerate orthogonal modes is designed at the intersection of two W1 waveguides and exhibits a fairly wide hysteresis loop. It is shown that such topologies can be used to design fast all-optical memory cells. Two different topologies for the realization of all-optical memories are thereby proposed. Based on the simulation results, for the final structure proposed in this paper, a 2ps-wide Gaussian-shaped trigger pulse can be used to change the state stored in the memory cell. It takes nearly 5ps for the memory to change its state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 430, 1 January 2019, Pages 323-335
Journal: Optics Communications - Volume 430, 1 January 2019, Pages 323-335
نویسندگان
Alireza Geravand, Mohammad Danaie, Saeed Mohammadi,