کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10142440 | 1646099 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Composition dependence of penetration range and backscattering coefficient of electrons impinging on SixGe1âx and GaAsxN1âx semiconducting alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The alloy composition dependence of penetration range and backscattering coefficient of electrons normally impinging on SixGe1âx and GaAsxN1âx semiconductor alloys targets for beam energies in the range 0.5-3.5â¯keV has been investigated. The electron penetration range is calculated using the Ashley's model. The electron backscattering coefficient is determined using both the Vicanek and Urbassek theory where the transport cross-sections are obtained more accurately via an improved approximation and Monte Carlo method in which the inelastic scattering processes are treated via Ashley's optical model. Our results regarding the electron backscattering coefficient for Si and Ge targets are found to be much higher than those of experiment when using the Vicanek and Urbassek theory. However, the use of Ashley's model via Monte Carlo method gives results that are in reasonably good accord with the experimental data reported in the literature in the low energy regime being considered here.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 195, December 2018, Pages 53-57
Journal: Ultramicroscopy - Volume 195, December 2018, Pages 53-57
نویسندگان
M. Ajmal Khan, H. Algarni, N. Bouarissa, O.A. Al-Hagan, T.F. Alhuwaymel,