کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364237 | 871565 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT](/preview/png/10364237.png)
چکیده انگلیسی
High electron mobility transistors (HEMTs) based on the III-nitride material system have attracted interest for high-frequency electronic components operating at high-power levels. Nitride based HEMTs can achieve power, bandwidth and efficiency levels that exceed the performance of Si, GaAs or SiC based devices. At present, a major limitation of nitride HEMTs is their failure to achieve reliability on par with Si-LDMOS or GaAs pHEMT devices. The development of SiNx passivation layers have largely mitigated the gate lag effect, however, this passivation layer introduces an additional strain that forms a non-uniform polarization induced charge. Furthermore, this excess strain can locally relax the film eliminating the piezoelectric induced charge in addition to forming defects that act as electron traps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 8, August 2005, Pages 705-711
Journal: Microelectronics Journal - Volume 36, Issue 8, August 2005, Pages 705-711
نویسندگان
M.A. Mastro, J.R. LaRoche, N.D. Bassim, C.R. Jr.,