کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10364441 871674 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Record gain at 3.1 GHz of 4H-SiC high power RF MESFET
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Record gain at 3.1 GHz of 4H-SiC high power RF MESFET
چکیده انگلیسی
In this paper, a very high gain 4H-SiC power MESFET with incorporation of L-gate and source field plate (LSFP-MESFET) structures for high power and RF applications is proposed. The influence of L-gate and source field plate structures on saturation current, breakdown voltage (Vb) and small-signal characteristics of the LSFP-MESFET was studied by numerical device simulation. The optimized results showed that Vb of the LSFP-MESFET is 91% larger than that of the 4H-SiC conventional MESFET (C-MESFET), which meanwhile maintains almost 77% higher saturation drain current characteristics. The maximum output power densities of 21.8 and 5.5 W/mm are obtained for the LSFP-MESFET and C-MESFET, respectively, which means about 4 times larger output power for the proposed device. Also, the cut-off frequency (fT) of 23.1 GHz and the maximum oscillation frequency (fmax) of 85.3 GHz for the 4H-SiC LSFP-MESFET are obtained compared to 9.4 and 36.2 GHz for that of the C-MESFET structure, respectively. The proposed LSFP-MESFET shows a new record maximum stable gain exceeding 22.7 dB at 3.1 GHz, which is 7.6 dB higher than that of the C-MESFET. To the best of our knowledge, this is 2.5 dB greater than the highest gain yet reported for SiC MESFETs, showing the potential of this device for high power RF applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 299-304
نویسندگان
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