کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364450 | 871674 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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![عکس صفحه اول مقاله: A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation](/preview/png/10364450.png)
چکیده انگلیسی
An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model reproduces correctly the experimental measurements obtained for devices with diverse sizes in different electrical and thermal operation regimes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 365-370
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 365-370
نویسندگان
Andrés M. Roldán, Juan B. Roldán, CÃ ndid Reig, M.-D. Cubells-Beltrán, Diego RamÃrez, Susana Cardoso, Paulo P. Freitas,