کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364468 | 871721 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advances in self-assembled semiconductor quantum dot lasers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 11, November 2005, Pages 950-956
Journal: Microelectronics Journal - Volume 36, Issue 11, November 2005, Pages 950-956
نویسندگان
M. Henini, M. Bugajski,