کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364478 | 871721 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we have calculated ab initio the structural and electronic properties of both the C- and Si-terminated SiC (100) surfaces in the c(2Ã2) and (2Ã1) reconstruction patterns, respectively. Based on our results, we found that the Si-terminated surfaces is dominated by weak bonded Si-dimers, which is stabilized only at Si-rich conditions, leading to a (3Ã2) or more complex reconstruction patterns, as verified experimentally. Also, our results show that the C-terminated surfaces is characterized by strong triply-bonded C-dimers, in a c(2Ã2) reconstruction pattern, which consists of C2 pairs over Si bridge sites, which is consistent with the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 36, Issue 11, November 2005, Pages 998-1001
Journal: Microelectronics Journal - Volume 36, Issue 11, November 2005, Pages 998-1001
نویسندگان
J.S. Soares, H.W. Leite Alves,