کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10364669 871773 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature, humidity, and bias acceleration model for a GaAs pHEMT process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Temperature, humidity, and bias acceleration model for a GaAs pHEMT process
چکیده انگلیسی
This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process. The impact of bias was studied and a humidity-induced semiconductor failure model, incorporating bias acceleration, was proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 12, Part A, December 2015, Pages 2511-2515
نویسندگان
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