کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364709 | 871787 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The change of spectrum of the AlGaAs/GaAs single quantum well laser diode is measured under the application of uniform uniaxial in-plane tensile and compressive stress. In the range of the tensile stress we apply (up to 597 MPa), the wavelength increases linearly at a rate of 5.3 nm GPaâ1. The energy band gap decreases with the tensile stress with the slope of â10 meV GPaâ1, which is close to the theoretical change of the heavy hole band edge with respect to the conduction band edge. There is a shorter wavelength peak existing on the spectrum as the tensile stress increases, suggesting a transition from the conduction band to a higher energy valence band. For the compressive stress (up to â516 MPa), the wavelength decreases with the stress, but it shows an abrupt reduction from â162 to â200 MPa. The threshold current also varies as a result of the change of the energy band structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 1, January 2015, Pages 62-65
Journal: Microelectronics Reliability - Volume 55, Issue 1, January 2015, Pages 62-65
نویسندگان
Hui Zhu, Kun Liu, Cong Xiong, Shiwei Feng, Chunsheng Guo,