کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10364729 871787 2015 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Equivalent mechanical properties of through silicon via interposers - A unit model approach
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Equivalent mechanical properties of through silicon via interposers - A unit model approach
چکیده انگلیسی
A closed-form description of the equivalent mechanical properties of through-silicon via (TSV) interposers is given in this paper. The goal is to homogenize a unit TSV model for global analysis of interposer design and optimization. The equivalence between the heterogeneous TSV model and its homogenized counterpart is in the sense that, both models have an identical radial deformation at the boundary when subjected to the same loadings. The equivalent mechanical properties derived herein are: the in-plane equivalent Young's modulus, bulk modulus, and coefficient of thermal expansion (CTE); the out-of-plane Young's modulus, rigidity modulus, CTE, and the Poisson's ratio. These equivalent properties form a transversely isotropic description of the homogenized TSV model, and can be readily used in finite element or computer-aided design package for globally characterizing the thermomechanical response of the interposer, or simulating its interaction with the annexed layers in the package. These equivalent properties are primarily developed for interposers with vias of uniform diameter through the thickness. When applying to interposers with tapered vias, the predicted results will be perturbed to an extent that is determined collectively by the aspect ratio and tilt angle of the tapered vias. The analytical work, which does not consider the thin liner layer, is compared to some known results that had considered the liner layer, to understand the extent of approximation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 1, January 2015, Pages 221-230
نویسندگان
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