Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs

► Virtually dopant-free CMOS multi-gate silicon-nanowire FET SOI technology. ► Midgap Schottky-barrier source/drain enabling carrier tunneling. ► Use of Schottky-barriers provides low source/drain leakage. ► Asymmetric workfunction metal not suitable for NWFET technology. ► Voltage selectable NWFET types add to flexibility in circuit design.