کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364839 | 871851 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Exact closed-form expressions for substrate resistance and capacitance extraction in nanoscale VLSI
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A new exact formula to determine the substrate resistance and capacitance is presented in this work. It is derived from the solution of the Laplace equations for equivalent problems. It achieves the level of accuracy of standard electromagnetic methods while it is orders of magnitude faster than them. Equations for both rectangular and non-rectangular shapes of interconnect lines which apply to sub-micron technologies are presented. Both data from commercial simulators and measurement data obtained from a fabricated test chip are utilized in order to show the validity of the proposed formula. The results show that the proposed formula succeeds in computing the substrate's resistive and capacitive coupling.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 12, December 2013, Pages 1077-1083
Journal: Microelectronics Journal - Volume 44, Issue 12, December 2013, Pages 1077-1083
نویسندگان
Yiorgos I. Bontzios, Michael G. Dimopoulos, Alexandros I. Dimitriadis, Alkis A. Hatzopoulos,