کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10364847 871851 2013 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An ultra-low-power CMOS voltage reference generator based on body bias technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
An ultra-low-power CMOS voltage reference generator based on body bias technique
چکیده انگلیسی
A CMOS voltage reference, based on body bias technique, has been proposed and simulated using SMIC 0.18 μm CMOS technology in this paper. The proposed circuit can achieve a temperature coefficient of 19.4 ppm/°C in a temperature range from −20 °C to 80 °C, and a line sensitivity of 0.024 mV/V in a supply voltage range from 0.85 V to 2.5 V, without the use of resistors and any other special devices such as thick gate oxides MOSFETs with higher threshold voltage. The supply current at the maximum supply voltage and at 27 °C is 214 nA. The power supply rejection ratio without any filtering capacitor at 10 Hz and 10 kHz are −88.2 dB and −36 dB, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 12, December 2013, Pages 1145-1153
نویسندگان
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