کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364859 | 871851 | 2013 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Two dimensional analytical modeling for asymmetric 3T and 4T double gate tunnel FET in sub-threshold region: Potential and electric field
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper a two dimensional analytical model of channel potential and electric field for an asymmetric and symmetric double gate three-terminal (3T) and four-terminal (4T) silicon n-tunnel field effect transistor (Si-nTFET) device in sub-threshold region, without surface accumulation or inversion, is presented. Since the modeling has been done in subthreshlod regime operation, no Quantum Mechanical (QM) study has been taken. A very good agreement of analytically modeled results with the TCAD simulated results for the three-terminal (3T) and four-terminal (4T) Si-nTFET device was found. The model presented is based on the physics of the device. The modeling is for a 3T/4T asymmetric Tunnel FET and with appropriate changes in the device parameters we can also model for symmetric devices as well. The modeling scheme is thus quite robust.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 12, December 2013, Pages 1251-1259
Journal: Microelectronics Journal - Volume 44, Issue 12, December 2013, Pages 1251-1259
نویسندگان
Menka Yadav, Anand Bulusu, Sudeb Dasgupta,