کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364876 | 871855 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper we present the results of the implementation of a nanoscale double-gate (DG) MOSFET compact model, which includes hydrodynamic transport model, in Verilog-A in order to carry out circuit simulation. The model in Verilog-A is used with the SMASH circuit simulator for the analysis of the DC and transient behavior electrical CMOS circuits. Template devices representative for a downscaled symmetric double-gate MOSFET was used to validate the models for n-channel and p-channel. A CMOS inverter and a ring oscillator have been analyzed. Comparison of its performance between the drift-diffusion (DD) and hydrodynamic transport model within the practical range of bias voltages has been highlighted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 2, February 2013, Pages 80-85
Journal: Microelectronics Journal - Volume 44, Issue 2, February 2013, Pages 80-85
نویسندگان
Muthupandian Cheralathan, Esteban Contreras, JoaquÃn Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamin Iñiguez,